Role of deep traps in carrier generation and transport in differently doped InP wafers
Identifieur interne : 001557 ( Chine/Analysis ); précédent : 001556; suivant : 001558Role of deep traps in carrier generation and transport in differently doped InP wafers
Auteurs : RBID : Pascal:06-0407989Descripteurs français
- Pascal (Inist)
- Niveau profond, Phénomène transport, Génération porteur charge, Mobilité porteur charge, Dopage, Pastille électronique, Régime hors équilibre, Recombinaison porteur charge, Résolution temporelle, Spectre résolution temporelle, Mélange 4 ondes, Durée vie porteur charge, Diffusion porteur charge, Rétroaction, Photoconductivité, Phénomène transitoire, Densité défaut, Défaut cristallin, Matériau dopé, Indium phosphure, Composé binaire, Semiconducteur III-V, Composé minéral, In P, InP.
- Wicri :
- concept : Dopage, Composé minéral.
English descriptors
- KwdEn :
- Binary compound, Carrier lifetime, Charge carrier generation, Charge carrier mobility, Charge carrier recombination, Charge carrier scattering, Crystal defect, Deep level, Defect density, Doped materials, Doping, Feedback regulation, Four wave mixing, III-V semiconductors, Indium phosphide, Inorganic compound, Non equilibrium conditions, Photoconductivity, Time resolution, Time resolved spectra, Transients, Transport process, Wafer.
Abstract
We report on investigations of nonequilibrium carrier generation, recombination and transport in differently doped InP crystals by means of time resolved degenerative four-wave mixing technique. The role of deep traps in carrier diffusion and lifetime was monitored through a feedback effect of a space-charged field to carrier transport and provided a photoconductivity type of differently doped InP crystals. Fast transients were used to evaluate the concentration of residual defects in the crystals.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Role of deep traps in carrier generation and transport in differently doped InP wafers</title><author><name sortKey="Sun, N" uniqKey="Sun N">N. Sun</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, P.O. Box 179</s1><s2>Shijiazhuang, Hebei</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shijiazhuang, Hebei</wicri:noRegion></affiliation></author><author><name sortKey="Jarasiunas, K" uniqKey="Jarasiunas K">K. Jarasiunas</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Materials Science, Vilnius University, Sauletekio Avenue 9 bld. 3</s1><s2>10222 Vilnius</s2><s3>LTU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>10222 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Sudzius, M" uniqKey="Sudzius M">M. Sudzius</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Materials Science, Vilnius University, Sauletekio Avenue 9 bld. 3</s1><s2>10222 Vilnius</s2><s3>LTU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>10222 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Kadys, A" uniqKey="Kadys A">A. Kadys</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Materials Science, Vilnius University, Sauletekio Avenue 9 bld. 3</s1><s2>10222 Vilnius</s2><s3>LTU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>10222 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Zhou, X" uniqKey="Zhou X">X. Zhou</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, P.O. Box 179</s1><s2>Shijiazhuang, Hebei</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shijiazhuang, Hebei</wicri:noRegion></affiliation></author><author><name sortKey="Sun, T" uniqKey="Sun T">T. Sun</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, P.O. Box 179</s1><s2>Shijiazhuang, Hebei</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shijiazhuang, Hebei</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0407989</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0407989 INIST</idno><idno type="RBID">Pascal:06-0407989</idno><idno type="wicri:Area/Main/Corpus">008A23</idno><idno type="wicri:Area/Main/Repository">008479</idno><idno type="wicri:Area/Chine/Extraction">001557</idno></publicationStmt><seriesStmt><idno type="ISSN">1369-8001</idno><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><title level="j" type="main">Materials science in semiconductor processing</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term><term>Carrier lifetime</term><term>Charge carrier generation</term><term>Charge carrier mobility</term><term>Charge carrier recombination</term><term>Charge carrier scattering</term><term>Crystal defect</term><term>Deep level</term><term>Defect density</term><term>Doped materials</term><term>Doping</term><term>Feedback regulation</term><term>Four wave mixing</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>Inorganic compound</term><term>Non equilibrium conditions</term><term>Photoconductivity</term><term>Time resolution</term><term>Time resolved spectra</term><term>Transients</term><term>Transport process</term><term>Wafer</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Niveau profond</term><term>Phénomène transport</term><term>Génération porteur charge</term><term>Mobilité porteur charge</term><term>Dopage</term><term>Pastille électronique</term><term>Régime hors équilibre</term><term>Recombinaison porteur charge</term><term>Résolution temporelle</term><term>Spectre résolution temporelle</term><term>Mélange 4 ondes</term><term>Durée vie porteur charge</term><term>Diffusion porteur charge</term><term>Rétroaction</term><term>Photoconductivité</term><term>Phénomène transitoire</term><term>Densité défaut</term><term>Défaut cristallin</term><term>Matériau dopé</term><term>Indium phosphure</term><term>Composé binaire</term><term>Semiconducteur III-V</term><term>Composé minéral</term><term>In P</term><term>InP</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on investigations of nonequilibrium carrier generation, recombination and transport in differently doped InP crystals by means of time resolved degenerative four-wave mixing technique. The role of deep traps in carrier diffusion and lifetime was monitored through a feedback effect of a space-charged field to carrier transport and provided a photoconductivity type of differently doped InP crystals. Fast transients were used to evaluate the concentration of residual defects in the crystals.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1369-8001</s0></fA01><fA03 i2="1"><s0>Mater. sci. semicond. process.</s0></fA03><fA05><s2>9</s2></fA05><fA06><s2>1-3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Role of deep traps in carrier generation and transport in differently doped InP wafers</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>11th International Conference on Defects - Recognition Imaging and Physics in Semiconductors (DRIP-XI), September 13-19, 2005, Beijing, China</s1></fA09><fA11 i1="01" i2="1"><s1>SUN (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>JARASIUNAS (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>SUDZIUS (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>KADYS (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>ZHOU (X.)</s1></fA11><fA11 i1="06" i2="1"><s1>SUN (T.)</s1></fA11><fA12 i1="01" i2="1"><s1>WANG (Zhanguo)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>YANG (Deren)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>QU (Shengchun)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, P.O. Box 179</s1><s2>Shijiazhuang, Hebei</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Materials Science, Vilnius University, Sauletekio Avenue 9 bld. 3</s1><s2>10222 Vilnius</s2><s3>LTU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>1 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>Chinese Academy of Sciences. Institute of Semiconductors</s1><s2>Beijing</s2><s3>CHN</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>Zhejiang University</s1><s2>Hangzhou, Zhejiang Province</s2><s3>CHN</s3><s9>org-cong.</s9></fA18><fA20><s1>390-393</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888A</s2><s5>354000115669740810</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>7 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0407989</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science in semiconductor processing</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on investigations of nonequilibrium carrier generation, recombination and transport in differently doped InP crystals by means of time resolved degenerative four-wave mixing technique. The role of deep traps in carrier diffusion and lifetime was monitored through a feedback effect of a space-charged field to carrier transport and provided a photoconductivity type of differently doped InP crystals. Fast transients were used to evaluate the concentration of residual defects in the crystals.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03C</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Niveau profond</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Deep level</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Nivel profundo</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Phénomène transport</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Transport process</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Fenómeno transporte</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Génération porteur charge</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Charge carrier generation</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Generación portador carga</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Mobilité porteur charge</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Charge carrier mobility</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Movilidad portador carga</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Dopage</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Doping</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Doping</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Pastille électronique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Wafer</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Pastilla electrónica</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Régime hors équilibre</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Non equilibrium conditions</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Régimen fuera equilibrio</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Recombinaison porteur charge</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Charge carrier recombination</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Recombinación portador carga</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Résolution temporelle</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Time resolution</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Resolución temporal</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Time resolved spectra</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Mélange 4 ondes</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Four wave mixing</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Mezcla 4 ondas</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Durée vie porteur charge</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Carrier lifetime</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Diffusion porteur charge</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Charge carrier scattering</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Difusión portador carga</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Rétroaction</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Feedback regulation</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Retroacción</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Photoconductivité</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Photoconductivity</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Fotoconductividad</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Phénomène transitoire</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Transients</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Fenómeno transitorio</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Densité défaut</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Defect density</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Densidad defecto</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Défaut cristallin</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Crystal defect</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Defecto cristalino</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>22</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Doped materials</s0><s5>22</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Indium phosphure</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>23</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Composé binaire</s0><s5>24</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Binary compound</s0><s5>24</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>24</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>31</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>31</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Composé minéral</s0><s5>32</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Inorganic compound</s0><s5>32</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Compuesto inorgánico</s0><s5>32</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>In P</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>InP</s0><s4>INC</s4><s5>83</s5></fC03><fN21><s1>268</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>DRIP-XI: International Conference on Defects - Recognition Imaging and Physics in Semiconductors</s1><s2>11</s2><s3>Beijing CHN</s3><s4>2005-09-13</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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